| 詳細(xì)參數(shù) | |||
|---|---|---|---|
| 品牌 | innodisk | 型號(hào) | M3S0-4GSJDLPC |
| 內(nèi)存容量 | 4G | 內(nèi)存類型 | DDRIII |
| 顆粒封裝 | FBGA | 質(zhì)保 | 其他 |
我們的嵌入式系統(tǒng)符合JEDEC內(nèi)存標(biāo)準(zhǔn)，并提供各種不同外觀尺寸、容量、速度，以優(yōu)化嵌入式系統(tǒng)的表現(xiàn)。
|
4GB |
1866MT/s |
256Mx16 |
Samsung |
2 |
2 |
M3S0-4GSV0CQE |
|
4GB |
1600MT/s |
256Mx16 |
Samsung |
2 |
2 |
M3S0-4GSV0CPC |
|
4GB |
1333MT/s |
256Mx16 |
Samsung |
2 |
2 |
M3S0-4GSV0CN9 |
|
4GB |
1866MT/s |
256Mx16 |
Micron |
2 |
2 |
M3S0-4GMV0CQE |
|
4GB |
1600MT/s |
256Mx16 |
Micron |
2 |
2 |
M3S0-4GMV0CPC |
|
4GB |
1333MT/s |
256Mx16 |
Micron |
2 |
2 |
M3S0-4GMV0CN9 |
|
4GB |
1866MT/s |
256Mx8 |
Samsung |
2 |
2 |
M3S0-4GSJDCQE |
|
4GB |
1600MT/s |
256Mx8 |
Samsung |
2 |
2 |
M3S0-4GSJDCPC |
|
4GB |
1333MT/s |
256Mx8 |
Samsung |
2 |
2 |
M3S0-4GSJDCN9 |
|
4GB |
1066MT/s |
256Mx8 |
Samsung |
2 |
2 |
M3S0-4GSJDCM7 |
|
4GB |
800MT/s |
256Mx8 |
Samsung |
2 |
2 |
M3S0-4GSJDCL6 |
|
4GB |
1866MT/s |
256Mx8 |
Micron |
2 |
2 |
M3S0-4GMJDCQE |
|
4GB |
1600MT/s |
256Mx8 |
Micron |
2 |
2 |
M3S0-4GMJDCPC |
|
4GB |
1333MT/s |
256Mx8 |
Micron |
2 |
2 |
M3S0-4GMJDCN9 |
|
4GB |
1866MT/s |
512Mx8 |
Samsung |
1 |
2 |
M3S0-4GSSCCQE |
|
4GB |
1600MT/s |
512Mx8 |
Samsung |
1 |
2 |
M3S0-4GSSCCPC |
|
4GB |
1333MT/s |
512Mx8 |
Samsung |
1 |
2 |
M3S0-4GSSCCN9 |
|
4GB |
1866MT/s |
512Mx8 |
Micron |
1 |
2 |
M3S0-4GMSCCQE |
|
4GB |
1600MT/s |
512Mx8 |
Micron |
1 |
2 |
M3S0-4GMSCCPC |
|
4GB |
1333MT/s |
512Mx8 |
Micron |
1 |
2 |
M3S0-4GMSCCN9 |
? ? ? ?DDR3 SODIMM memory (small outline) is a compact industrial standards memory module that fits neatly into any bded, surveillance and automation setup. DDR3 SODIMM memory comply with all relevant JEDEC standards and are available in 1GB, 2GB, 4GB, and 8GB capacities and with data transfer rates of 1066MT/s, 1333MT/s, 1600MT/s, and 1866MT/s.
? ? ? ?DDR3 SODIMM內(nèi)存（小外框）是一種緊湊的工業(yè)標(biāo)準(zhǔn)內(nèi)存模塊，可巧妙地安裝在任何嵌入式、監(jiān)控和自動(dòng)化設(shè)置中。DDR3 SODIMM內(nèi)存符合所有相關(guān)JEDEC標(biāo)準(zhǔn)，具有1GB、2GB、4GB和8GB容量，數(shù)據(jù)傳輸速率分別為1066MT/s、1333MT/s、1600MT/s和1866MT/s。
規(guī)格：
|
Interface |
DDR3 |
|
Form Factor |
SODIMM |
|
Data Rate |
1066 MT/s, 1333 MT/s, 1600 MT/s, 1866 MT/s |
|
Capacity |
1GB, 2GB, 4GB, 8GB |
|
Function |
Non-ECC Unbuffered Memory |
|
Pin Number |
204pin |
|
Width |
64Bits |
|
Voltage |
1.5V, 1.35V |
|
PCB Height |
1.18 Inches |
|
Operating Temperature |
0°C to 85°C |
